Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices
نویسندگان
چکیده
منابع مشابه
Extended defects formation in nanosecond laser-annealed ion implanted silicon.
Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron...
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 1979
ISSN: 0013-5194
DOI: 10.1049/el:19790380